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sot223 n-channel enhancement mode vertical dmos fet issue 4 - october 1995 features * 240 volt bv ds * extremely low r ds(on) =4.3 w * low threshold and fast switching applications * earth recall and dialling switches * electronic hook switches * battery powered equipment * telecoms and high voltage dc-dc convertors partmarking details - zvn4424 complementary type - zvp4424g absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 240 v continuous drain current at t amb =25c i d 500 ma pulsed drain current i dm 1.5 a gate source voltage v gs 40 v power dissipation at t amb =25c p tot 2.5 w operating and storage temperature range t j :t stg -55 to +150 c ZVN4424G ZVN4424G electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ max. unit conditions. drain-source breakdown voltage bv dss 240 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 0.8 1.3 1.8 v i d =1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 40v, v ds =0v on state drain-current i d(on) 0.8 1.4 a v ds =10v, v gs =10v zero gate voltage drain current i dss 10 100 m a m a v ds =240 v, v gs =0v v ds =190 v, v gs =0v, t=125c static drain-source on-state resistance r ds(on) 4 4.3 5.5 6 w w v gs =10v,i d =500ma* v gs =2.5v,i d =100ma* forward transconductance (1) (2) g fs 0.4 0.75 s v ds =10v,i d =0.5a input capacitance (2) c iss 110 200 pf v ds =25v, v gs =0v, f=1mhz common source output capacitance (2) c oss 15 25 pf reverse transfer capacitance (2) c rss 3.5 15 pf turn-on delay time (2)(3) t d(on) 2.5 5 ns v dd ? 50v, i d =0.25a, v gen =10v rise time (2)(3) t r 58ns turn-off delay time (2)(3) t d(off) 40 60 ns fall time (2)(3) t f 16 25 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator spice parameter data is available upon request for this device d d s g 3 - 416 3 - 415
ZVN4424G 3 - 417 3 - 418 typical characteristics transfer characteristics i d - dra i n curr ent (amps) v gs - gate source voltage (volts) saturation characteristics i d - dra in curr ent (amps ) v ds - drain source voltage (volts) transconductance v drain current i d - drain current (amps ) g fs -transconductance (ms) transconductance v gate-source voltage v gs -gate source voltage (volts) g fs -transconductance (ms) normalised r ds(on) and v gs(th) vs temperature junction temperature (c) n o rm al i sed r d s( on ) and v gs( th) on-resistance vs drain current i d- drain current (amps) rds(on)-drain source on resistance ( w ) i d= 1ma v gs= v ds 0246810 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 300 m s pulsed test 4v 5v 0246810 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 3v 2.5v 2v 300 m s pulsed test v ds =10v -50 -25 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2.4 2.0 300 m s pulsed test 1.0 10 1.0 10 0.1 0.01 100 2.5v 3v 10v v gs =2v i d =0.5a v gs= 10v 0 200 400 600 800 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 01234 5 0 200 400 600 800 300 m s pulsed test v ds =10v 300 m s pulsed test v ds =10vz v gs =10v 110100 0.1 0 50 100 150 200 250 02468101214161820 0 2 4 6 8 10 12 14 typical characteristics q-gate charge (nc) capacitance v drain-source voltage c-c a p aci ta nce (p f) c rss c oss v ds -drain source voltage (volts) note:v gs= 0v c iss v gs -gate source voltage (volts) gate charge v gate-source voltage note:i d= 400ma v dd = 20v 50v 100v ZVN4424G
ZVN4424G 3 - 417 3 - 418 typical characteristics transfer characteristics i d - dra i n curr ent (amps) v gs - gate source voltage (volts) saturation characteristics i d - dra in curr ent (amps ) v ds - drain source voltage (volts) transconductance v drain current i d - drain current (amps ) g fs -transconductance (ms) transconductance v gate-source voltage v gs -gate source voltage (volts) g fs -transconductance (ms) normalised r ds(on) and v gs(th) vs temperature junction temperature (c) n o rm al i sed r d s( on ) and v gs( th) on-resistance vs drain current i d- drain current (amps) rds(on)-drain source on resistance ( w ) i d= 1ma v gs= v ds 0246810 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 300 m s pulsed test 4v 5v 0246810 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 3v 2.5v 2v 300 m s pulsed test v ds =10v -50 -25 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2.4 2.0 300 m s pulsed test 1.0 10 1.0 10 0.1 0.01 100 2.5v 3v 10v v gs =2v i d =0.5a v gs= 10v 0 200 400 600 800 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 01234 5 0 200 400 600 800 300 m s pulsed test v ds =10v 300 m s pulsed test v ds =10vz v gs =10v 110100 0.1 0 50 100 150 200 250 02468101214161820 0 2 4 6 8 10 12 14 typical characteristics q-gate charge (nc) capacitance v drain-source voltage c-c a p aci ta nce (p f) c rss c oss v ds -drain source voltage (volts) note:v gs= 0v c iss v gs -gate source voltage (volts) gate charge v gate-source voltage note:i d= 400ma v dd = 20v 50v 100v ZVN4424G
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